stw7na100 STH7NA100FI n - channel enhancement mode power mos transistors n typical r ds(on) = 1.45 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n gate charge minimised n reduced threshold voltage spread applications n high current, high speed switching n switch mode power supply (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram absolute maximum ratings symbol parameter value unit stw7na100 STH7NA100FI v ds drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w ) 1000 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 7 4.3 a i d drain current (continuous) at t c = 100 o c 4.4 2.7 a i dm ( ) drain current (pulsed) 28 28 a p tot total dissipation at t c = 25 o c 190 70 w derating factor 1.52 0.56 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d stw7na100 STH7NA100FI 1000 v 1000 v < 1.7 w < 1.7 w 7 a 4.3 a march 1998 to-247 isowatt218 1 2 3 1 2 3 1/6 .com .com .com 4 .com u datasheet
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.65 1.78 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 7a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 800 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 100 o c 50 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 3.5 a 1.45 1.7 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 3.5 a 5 7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 3170 270 76 4100 351 99 pf pf pf stw7na100-STH7NA100FI 2/6 .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 500 v i d = 3.5 a r g = 4.7 w v gs = 10 v 28 19 40 27 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 800 v i d = 7 a v gs = 10 v 125 17 58 150 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 800 v i d = 7a r g = 4.7 w v gs = 10 v 35 15 55 50 21 77 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 7 28 a a v sd ( * ) forward on voltage i sd = 7 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 835 14 33 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area stw7na100-STH7NA100FI 3/6 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data stw7na100-STH7NA100FI 4/6 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data stw7na100-STH7NA100FI 5/6 .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsa bility for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication su persedes and replaces all information previously supplied. sgs-thomson microelec tronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-t homson microe lectonics. ? 1998 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelec tronics gr oup of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a . . . stw7na100-STH7NA100FI 6/6 .com .com .com 4 .com u datasheet
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